Group III-V device on group IV substrate using contacts with precursor stacks

A semiconductor structure comprising:

• a group IV substrate including a group IV device;
• a patterned group III-V device over said group IV substrate;
• a precursor stack over a portion of said patterned group III-V device;
• a blanket dielectric layer over said patterned group III-V device;
• a first contact hole in said blanket dielectric layer over said group IV device;
• a first liner stack in said first contact hole;
• a first filler metal over said first liner stack;
• a second contact hole in said blanket dielectric layer over said first precursor stack;
• a second liner stack in said second contact hole over said first precursor stack;
• a second filler metal over said second liner stack;
• wherein said precursor stack comprises a plurality of precursor metals, said second liner stack comprises a plurality of metal liners, and a top precursor metal of said plurality of precursor metals comprises at least one shared component metal with a bottom metal liner of said plurality of metal liners;
• wherein said shared component metal is selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and nickel (Ni).

A semiconductor structure comprising:

• a group IV substrate;
• a group III-V device over said group IV substrate;
• a precursor stack over a portion of said group III-V device;
• a dielectric layer over said group III-V device;
• a contact hole in said dielectric layer over said precursor stack;
• a liner stack in said contact hole over said precursor stack;
• a filler metal over said liner stack;
• wherein said precursor stack comprises a plurality of precursor metals, said liner stack comprises a plurality of metal liners, and a top precursor metal of said plurality of precursor metals comprises at least one shared component metal with a bottom metal liner of said plurality of metal liners;
• wherein said shared component metal is selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and nickel (Ni).