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US 12,183,838 B1Granted
Passivation of infrared detectors using oxide layer
AssigneeHRL Laboratories, LLC
InventorPierre-Yves Delaunay
Life of this patent
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Abstract
An infrared detector and a method for manufacturing it are disclosed. The infrared detector contains an absorber layer responsive to infrared light, a barrier layer disposed on the absorber layer, a plurality of contact structures disposed on the barrier layer; and an oxide layer disposed above the barrier layer and between the plurality of the contact structures, wherein the oxide layer reduces the dark current in the infrared detector. The method disclosed teaches how to manufacture the infrared detector.
Claims11
A method of manufacturing an infrared detector, the method comprising:
- forming an absorber layer responsive to infrared light;
- forming a barrier layer on the absorber layer;
- forming a plurality of contact structures on the barrier layer;
- forming an oxide layer above the barrier layer and between the plurality of contact structures;
- and
- forming a passivation layer above the oxide layer, the passivation layer covering at least a portion of a top surface of a contact structure of the plurality of contact structures and defining an opening therethrough that exposes a portion of the top surface of the contact structure.
3 more elements
Dependencies are inferred from the claim text.