Thin film transistor and display apparatus comprising the same
AssigneeLG Display Co., Ltd.
InventorsSunggu Kim, DaeHwan Kim
Life of this patent
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Abstract
A thin film transistor and a display apparatus comprising the same are provided, in which the thin film transistor comprises an active layer, a barrier layer on the active layer; a gate insulating layer on the barrier layer; and a gate electrode on the gate insulating layer, wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and the barrier layer includes an oxide semiconductor material and has a resistivity greater than a resistivity of the active layer and has a thickness less than a thickness of the active layer.
Claims28
A thin film transistor comprising:
- an active layer including an oxide semiconductor material;
- a barrier layer on the active layer;
- a gate insulating layer on the barrier layer;
- and
- a gate electrode on the gate insulating layer,
- wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and
- the barrier layer includes an oxide semiconductor material and has a resistivity that is greater than a resistivity of the active layer and has a thickness that is less than a thickness of the active layer,
- wherein the barrier layer includes a first area overlapped with the gate electrode and a second area that is not overlapped with the gate electrode, and the first area has a thickness greater than a thickness of the second area.
A thin film transistor comprising:
- an active layer including an oxide semiconductor material;
- a barrier layer on the active layer, wherein the barrier layer is a distinct layer from the active layer;
- a gate insulating layer on the barrier layer;
- and
- a gate electrode on the gate insulating layer,
- wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and
- the barrier layer includes an oxide semiconductor material having a carrier concentration that is less than a carrier concentration of the oxide semiconductor material included in the active layer,
- wherein the barrier layer includes a first area overlapped with the gate electrode and a second area that is not overlapped with the gate electrode, and the first area has a thickness greater than a thickness of the second area.
A thin film transistor comprising:
- an active layer including an oxide semiconductor material;
- a barrier layer on the active layer;
- a gate insulating layer on the barrier layer;
- and
- a gate electrode on the gate insulating layer,
- wherein at least a portion of the gate electrode overlaps at least a portion of the active layer, and
- the barrier layer includes an oxide semiconductor material and has a resistivity that is greater than a resistivity of the active layer and has a thickness that is less than a thickness of the active layer, and
- wherein the barrier layer has an oxygen atom concentration greater than an oxygen atom concentration of the active layer.
Dependencies are inferred from the claim text.