US 12,183,824 B2 · Thin film transistor and method for manufacturing the same, array substrate and display device

Abstract

The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

Claims20

Dependent claims

A thin film transistor, comprising an active layer, wherein the active layer comprises at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers comprise a channel layer and a first protection layer, and metal elements in the channel layer comprise tin and at least one of indium, gallium and zinc;

and, the first protection layer comprises praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation, and a number of praseodymium atoms per unit volume at a position distal from the channel layer is less than a number of praseodymium atoms per unit volume at a position proximal to the channel layer.

A method for manufacturing a thin film transistor, comprising:

providing a base substrate;
and
forming an active layer of the thin film transistor by sequentially forming at least two metal oxide semi-conductor layers on the base substrate, wherein the at least two metal oxide semi-conductor layers comprise a channel layer and a first protection layer, and metal elements in the channel layer comprise tin and at least one of indium, gallium and zinc;
and the first protection layer comprises praseodymium used to absorb photo-generated electrons at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation, and a number of praseodymium atoms per unit volume at a position distal from the channel layer is less than a number of praseodymium atoms per unit volume at a position proximal to the channel layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

17/611,156Filed 28 Jan 2021

Published

US 2023/0091604 A123 Mar 2023

Granted

31 Dec 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10D 30/6704
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 86/0221
Of multiple TFTs: comprising manufacture, treatment or patterning of TFT semiconductor bodies
H10D 86/423
Having a particular composition, shape or crystalline structure of the active layer: comprising semiconductor materials not belonging to the Group…

Thin film transistor and method for manufacturing the same, array substrate and display device

Life of this patent

Thin film transistor and method for manufacturing the same, array substrate and display device

Life of this patent

Abstract

Claims20