Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor region provided on the first electrode and electrically connected to the first electrode, the first semiconductor region being of a first conductivity type;
• a second semiconductor region provided on a portion of the first semiconductor region, the second semiconductor region being of a second conductivity type;
• a third semiconductor region provided on the second semiconductor region, the third semiconductor region being of the first conductivity type;
• a first conductive part provided in a first trench, the first trench being provided on a portion of the first semiconductor region, the first conductive part including a portion facing a side surface of the second semiconductor region, a length of the first trench along a second direction being shorter than a length of the first trench along a third direction, a first direction being from the first electrode toward the first semiconductor region, the second direction being perpendicular to the first direction, the third direction being perpendicular to the first and second directions;
• a second conductive part provided in the first trench, the second conductive part including a portion facing a side surface of the first semiconductor region, the second conductive part being arranged with the first conductive part in the second direction;
• a first insulating film provided in the first trench, the first insulating film being between the second conductive part and the first semiconductor region;
• a second insulating film provided in the first trench, the second insulating film being between the first conductive part and the second conductive part;
• a third insulating film provided on the third semiconductor region, the first conductive part and the second conductive part;
• a second electrode provided above the second and third semiconductor regions and electrically connected to the second and third semiconductor regions, at least a portion of the second electrode being provided on the third insulating film, the second electrode including a first region and a second region separated from the first region in the third direction;
• a first conductive region provided above the second conductive part and electrically connected to the second conductive part, at least a portion of the first conductive region being provided on the third insulating film, the first conductive region being provided between the first region and the second region in the third direction, the first conductive region being electrically separated from the second electrode;
• a second conductive region provided above the first conductive part and electrically connected to the first conductive part, at least a portion of the second conductive region being provided on the third insulating film;
• and
• an electrode pad electrically connected to the second conductive region, the electrode pad and the second conductive region being electrically separated from the second electrode and the first conductive region.