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US 12,183,815 B2Granted
Non-linear HEMT devices
AssigneeSemiconductor Components Industries, LLC
InventorsAbhishek Banerjee, Peter Moens, Herbert De Vleeschouwer, Peter Coppens
Life of this patent
Estimating the term…
Abstract
High Electron Mobility Transistors (HEMTs) are described with a circular gate, with a drain region disposed within the circular gates and circular source region disposed around the circular gates. The circular gate and the circular source region may form complete circles.
Claims25
A High Electron Mobility Transistor (HEMT) device, comprising:
- a drain;
- a circular gate around the drain;
- a second drain;
- a second circular gate around the second drain;
- a source around the circular gate and the second circular gate;
- a drain contact electrically connected to the drain with a drain via connection, and to the second drain with a second drain via connection, through at least one dielectric layer;
- a source contact electrically connected to the source with a source via connection through the at least one dielectric layer;
- and
- a gate contact electrically connected to the circular gate and to the second circular gate with a gate via connection through the at least one dielectric layer.
6 more elements
A High Electron Mobility Transistor (HEMT) device, comprising:
- a first drain;
- a first circular gate around the first drain;
- a second drain;
- a second circular gate around the second drain and connected to the first circular gate, and to a gate pad;
- a source around the first circular gate and the second circular gate;
- a drain runner connected to the first drain with a first drain via connection through at least one dielectric layer, and connected to the second drain with a second drain via connection through the at least one dielectric layer;
- a source runner connected to the source with a first source via connection and a second source via connection through the at least one dielectric layer;
- and
- a gate contact connected to the gate pad with at least one gate via connection through the at least one dielectric layer.
6 more elements
A High Electron Mobility Transistor (HEMT) device, comprising:
- a plurality of connected, partial-circle gates;
- a plurality of drains, of which a drain is disposed within each of the partial-circle gates;
- a plurality of connected, partial-circle sources disposed along the plurality of connected, partial-circle gates;
- a drain metal connecting each of the plurality of drains to one another;
- a gate metal connected to the plurality of connected, partial-circle gates;
- and
- a source metal connected to the plurality of connected, partial-circle sources.
4 more elements
A HEMT device, comprising:
- a channel layer;
- a barrier layer disposed on the channel layer;
- a circular gate and a second circular gate disposed on the barrier layer;
- a circular gate metal disposed on the circular gate and a second circular gate metal disposed on the second circular gate, the circular gate metal and the second circular gate metal formed at a distance from the barrier layer;
- a drain within the circular gate and a second drain within the second circular gate;
- and
- a source around the circular gate and the second circular gate,
- wherein the circular gate metal and the second circular gate metal are electrically connected to each other at the distance from the barrier layer, and the drain and the second drain are electrically connected to each other.
5 more elements
Dependencies are inferred from the claim text.