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US 12,183,808 B2Granted
Reducing parasitic capacitance for gate-all-around device by forming extra inner spacers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Chih-Hao Wang, Shi Ning Ju, Kuan-Lun Cheng
Life of this patent
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Abstract
A semiconductor device includes a plurality of nanostructures. The nanostructures each contain a semiconductive material. A plurality of first spacers circumferentially wrap around the nanostructures. A plurality of second spacers circumferentially wrap around the first spacers. A plurality of third spacers is disposed between the second spacers vertically. A gate structure surrounds the second spacers and the third spacers.
Claims20
A semiconductor device, comprising:
- a nanostructure that contains a semiconductive material;
- a first spacer structure disposed above and below the nanostructure in a first cross-sectional side view, wherein the first spacer structure circumferentially surrounds the nanostructure in a second cross-sectional side view different from the first cross-sectional side view;
- a second spacer structure disposed above and below the first spacer structure in the first cross-sectional side view, wherein the second spacer structure circumferentially surrounds the first spacer structure in the second cross-sectional side view;
- and
- a first source/drain region and a second source/drain region;
- wherein:
- the nanostructure, the first spacer structure, and the second spacer structure are disposed between the first source/drain region and the second source/drain region in the first cross-sectional side view;
- and
- a side surface of the first source/drain region or a side surface of the second source/drain region extends to the first spacer structure.
6 more elements
A semiconductor device, comprising:
- a plurality of nanostructures that each contains a semiconductive material;
- a plurality of first spacers interspersed among the nanostructure in a first cross-sectional side view, wherein the first spacers each contains a first type of material that contains oxygen and silicon;
- and
- a plurality of second spacers interspersed among the first spacers in the first cross-sectional side view, wherein the second spacers each contains a second type of material that comprises oxygen and one or more elements other than silicon, wherein each of the nanostructures extends to a respective one of the first spacers, but not to any of the second spacers, and wherein the second spacers are narrower than the first spacers in the first cross-sectional side view.
1 more element
A semiconductor device, comprising:
- a plurality of nanostructures that each contains a semiconductive material, wherein the nanostructures are arranged into a vertical stack where each of the nanostructures is separated from adjacent ones of the nanostructures in a first cross-sectional side view;
- and
- a plurality of spacers disposed between the nanostructures in the vertical stack, wherein the spacers have more rounded surfaces in a second cross-sectional side view than in the first cross-sectional side view, and wherein the spacers include at least two different types of materials.
Dependencies are inferred from the claim text.