Semiconductor device

A semiconductor device, comprising:

• a first source/drain structure;
• a second source/drain structure;
• first channels respectively extending from the first source/drain structure, the first channels being spaced apart from each other in a vertical direction;
• second channels respectively extending from the second source/drain structure, the second channels being apart from each other in the vertical direction;
• third channels respectively extending between the first source/drain structure and the second source/drain structure, the third channels being spaced apart from each other in the vertical direction;
• a first gate structure surrounding the first channels, the first gate structure extending in a horizontal direction;
• a second gate structure surrounding the second channels, the second gate structure extending in the horizontal direction;
• at least one sacrificial pattern between adjacent ones of the third channels;
• and
• a trench penetrating the at least one sacrificial pattern and the third channels, the trench extending in the horizontal direction,
• wherein each of the third channels includes:
• a first portion in contact with the first source/drain structure, the first portion having a first length in the horizontal direction, and
• a second portion in contact with the second source/drain structure the second portion having a second length in the horizontal direction, the second length being less than the first length.

A semiconductor device, comprising:

• a first transistor including:
• first channels spaced apart from each other in a vertical direction,
• a first gate structure surrounding the first channels, the first gate structure extending in a horizontal direction, and
• a pair of first source/drain structures respectively on opposite sides of the first channels;
• a second transistor including:
• second channels spaced apart from each other in the vertical direction,
• a second gate structure surrounding the second channels, the second gate structure extending in the horizontal direction, and
• a pair of second source/drain structures respectively on opposite sides of the second channels;
• and
• a boundary structure between the first transistor and the second transistor, the boundary structure including:
• third channels spaced apart from each other in the vertical direction, and
• sacrificial patterns respectively between the plurality of third channels, a length of those of the sacrificial patterns extending in the horizontal direction along sidewalls of the pair of first source/drain structures being different from a length of those of the sacrificial patterns extending in the horizontal direction along sidewalls of the pair of second source/drain structures.