MOSFET gate shielding using an angled implant

A method of forming trenches in a metal-oxide-semiconductor field-effect transistor (MOSFET), the method comprising:

• providing a device structure comprising an epitaxial layer atop a base, a well over the epitaxial layer, and a source layer over the well;
• providing a plurality of trenches through the device structure;
• forming a shielding layer in the device structure by directing ions into the plurality of trenches, wherein the ions are directed into a lower surface and first and second sidewalls of each of the plurality of trenches;
• forming a blocking layer over the device structure including within each of the plurality of trenches following formation of the shielding layer;
• forming a plurality of contact trenches through the blocking layer and the source layer;
• and
• forming a contact within one or more of the plurality of contact trenches.