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US 12,183,792 B2Granted
SiC composite substrate and composite substrate for semiconductor device
AssigneeNGK Insulators, Ltd.
InventorsKiyoshi Matsushima, Jun Yoshikawa, Morimichi Watanabe, Risa Miyakaze
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Abstract
Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.
Claims6
A SiC composite substrate comprising:
- a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction;
- and
- a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer,
- wherein a warpage-free joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.
1 more element
Dependencies are inferred from the claim text.