Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate including a transistor portion and a diode portion,
• wherein the transistor portion includes an injection suppression region configured to suppress injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate,
• wherein the diode portion includes a lifetime control region including a lifetime killer,
• wherein both the transistor portion and the diode portion have a base region of a second conductivity type in a surface of the semiconductor substrate,
• wherein the transistor portion and the injection suppression region further include an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region in the surface of the semiconductor substrate,
• wherein a ratio of the emitter region and the extraction region in the injection suppression region is lower than a ratio of the emitter region and the extraction region in the transistor portion,
• wherein, between a plurality of trench portions which extend in an extending direction of the transistor portion and the diode portion and are arranged in an arrangement direction of the transistor portion and the diode portion, the transistor portion and the injection suppression region include a plurality of mesa portions extending in the extending direction, and
• wherein any one of the emitter region and the extraction region is disposed in a mesa portion of the injection suppression region so as to be adjacent to each of the emitter regions disposed in a mesa portion adjacent to the transistor portion side.

A semiconductor device comprising:

• a semiconductor substrate including a transistor portion and a diode portion,
• wherein the transistor portion includes an injection suppression region configured to suppress injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate,
• wherein the diode portion includes a lifetime control region including a lifetime killer,
• wherein both the transistor portion and the diode portion have a base region of a second conductivity type in a surface of the semiconductor substrate,
• wherein the transistor portion and the injection suppression region further include an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region in the surface of the semiconductor substrate,
• wherein a ratio of the emitter region and the extraction region in the injection suppression region is lower than a ratio of the emitter region and the extraction region in the transistor portion, and
• wherein the emitter region is not disposed in a mesa portion adjacent to the diode portion in the injection suppression region.