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US 12,183,783 B2Granted
Stacked structure including two-dimensional material and method of fabricating the stacked structure
AssigneeSamsung Electronics Co., Ltd.
InventorsAlum Jung, Kyung-Eun Byun, Keunwook Shin
Life of this patent
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Abstract
A stacked structure may include a first material layer, a two-dimensional material layer on the first material layer, and a second material layer on the two-dimensional material layer. The two-dimensional material layer may include a plurality of holes that each expose a portion of the first material layer. The second material layer may be coupled to the first material layer through the plurality of holes.
Claims21
A stacked structure, the stacked structure comprising:
- a first material layer;
- a two-dimensional material layer directly on the first material layer, the two-dimensional material layer including a plurality of holes each exposing a portion of the first material layer;
- and
- a second material layer directly on the two-dimensional material layer, the second material layer being coupled to the first material layer through the plurality of holes,
- wherein the two-dimensional material layer comprises at least one of graphene, black phosphorus, amorphous boron nitride, two-dimensional hexagonal boron nitride (h-BN), phosphorene, or transition metal dichalcogenide, and
- wherein the two-dimensional material layer is between the first material layer and the second material layer.
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A method of fabricating a stacked structure, the method comprising:
- forming a two-dimensional material layer directly on a first material layer, the two-dimensional material layer comprising a plurality of holes each exposing a portion of the first material layer;
- and
- forming a second material layer directly on the two-dimensional material layer such that the second material layer is coupled to the first material layer through the plurality of holes,
- wherein the two-dimensional material layer comprises at least one of graphene, black phosphorus, amorphous boron nitride, two-dimensional hexagonal boron nitride (h-BN), phosphorene, or transition metal dichalcogenide, and
- wherein the two-dimensional material layer is between the first material layer and the second material layer.
2 more elements
Dependencies are inferred from the claim text.