Semiconductor device

A semiconductor device, comprising:

• a semiconductor part including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type and a fifth semiconductor layer of the second conductivity type;
• a first electrode provided on a back surface of the semiconductor part;
• a second electrode provided on a front surface of the semiconductor part, the first semiconductor layer extending between the first electrode and the second electrode, the second semiconductor layer being provided between the first semiconductor layer and the second electrode, the third semiconductor layer being partially provided between the second semiconductor layer and the second electrode, the fourth semiconductor layer being provided between the first semiconductor layer and the first electrode;
• and
• a control electrode provided inside a trench in the semiconductor part, the control electrode being provided between the semiconductor part and the second electrode, the control electrode being electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film, the control electrode extending in the first semiconductor layer from the front side of the semiconductor part, the second semiconductor layer facing the control electrode via the first insulating film,
• the semiconductor part including an active region and a termination region, the active region including the control electrode, the second semiconductor layer, and the third semiconductor layer, the termination region surrounding the active region,
• the fifth semiconductor layer being provided in the first semiconductor layer in the termination region and extending in a first direction directed along a boundary between the first semiconductor layer and the fourth semiconductor layer,
• the fifth semiconductor layer being provided with first and second distances in a second direction directed from the first electrode toward the second electrode, the first distance from the fifth semiconductor layer to the front surface of the semiconductor part being greater than the second distance from the fifth semiconductor layer to the back surface of the semiconductor part.