Metal-to-semiconductor contact including a 2D crystal material layer

A semiconductor device comprising:

• a metal layer;
• a semiconductor layer in electrical contact with the metal layer;
• a two-dimensional (2D) material layer between the metal layer and the semiconductor layer and having a 2D crystal structure;
• and
• a metal compound layer between the 2D material layer and the semiconductor layer,
• wherein a first surface of the metal compound layer contacts the 2D material layer and a second surface different from the first surface of the metal compound layer contacts the semiconductor layer, and
• wherein a difference of a reaction energy between a metal included in the metal compound layer and oxygen to a reaction energy between a semiconductor included in the semiconductor layer and oxygen is 2 eV or less,
• wherein the 2D material layer includes nanocrystalline graphene (nc-G), and
• wherein the metal compound layer includes both a metal oxide and a metal silicide.