Method for forming capacitor via

A method for forming a capacitor via, comprising:

• providing a to-be-processed wafer, the to-be-processed wafer comprising a substrate, and a first dielectric layer and a first mask layer that are sequentially formed on a surface of the substrate;
• forming a photoresist layer on a surface of the first mask layer;
• etching the photoresist layer in a vertical direction according to a compensated first etching parameter to form a patterned photoresist layer extending in a first etching direction;
• etching the first mask layer with the patterned photoresist layer as a mask to form the first patterned layer;
• sequentially forming a second dielectric layer and a second mask layer on a surface of the first patterned layer;
• etching the second mask layer and the second dielectric layer according to a compensated second etching parameter to form a second patterned layer extending in a second etching direction;
• and
• etching the first dielectric layer with the first patterned layer and the second patterned layer together as a capacitor pattern, to form a capacitor via.