Power converter
AssigneeMitsubishi Electric Corporation
InventorsShiro Hino, Junichi Nakashima, Takaaki Tominaga
Life of this patent
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Abstract
To provide a technique of reducing gate oscillation while suppressing reduction in switching speed. A semiconductor device according to the technique disclosed in the present description includes: a first gate electrode in an active region; a gate pad in a first region different from the active region in a plan view; and a first gate line electrically connecting the first gate electrode and the gate pad to each other. The first gate line is formed into a spiral shape. The first gate line is made of a different type of material from the first gate electrode.
Claims16
A power converter comprising:
- a plurality of semiconductor devices,
- each of the semiconductor devices includes
- a first gate electrode in an active region;
- a gate pad in a first region different from the active region in a plan view;
- and
- a first gate line electrically connecting the first gate electrode and the gate pad to each other, wherein
- the first gate line is formed into a spiral shape,
- an entirety of the first gate line is made of a different type of material than the first gate electrode, and the different type of material has a lower resistance than a material of the first gate electrode, and
- the plurality of semiconductor devices are connected in parallel to each other.
A power converter comprising:
- a plurality of semiconductor devices,
- each of the semiconductor devices includes
- a first gate electrode in an active region;
- a gate pad in a first region different from the active region in a plan view;
- and
- a first gate line electrically connecting the first gate electrode and the gate pad to each other, wherein
- the first gate line is formed into a spiral shape,
- the first gate line is arranged in the first region,
- an entirety of the first gate line is made of a different type of material than the first gate electrode, and the different type of material has a lower resistance than a material of the first gate electrode, and
- the plurality of semiconductor devices are connected in parallel to each other.
A power converter comprising:
- a plurality of semiconductor devices,
- each of the semiconductor devices includes
- a first gate electrode in an active region;
- a gate pad in a first region different from the active region in a plan view;
- and
- a first gate line electrically connecting the first gate electrode and the gate pad to each other, wherein
- the first gate line surrounds the active region in a plan view and is not closed,
- an entirety of the first gate line is made of a different type of material than the first gate electrode, and the different type of material has a lower resistance than a material of the first gate electrode, and
- the plurality of semiconductor devices are connected in parallel to each other.
Dependencies are inferred from the claim text.