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US 12,183,767 B2Granted
Complementary metal-oxide-semiconductor image sensor and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorBo-Tsung Tsai
Life of this patent
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Abstract
A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region. The pixel further includes a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.
Claims20
A pixel, comprising:
- a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk;
- a protrusion doping region in the protrusion;
- an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region;
- and
- a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.
2 more elements
A pixel, comprising:
- a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk;
- a protrusion doping region in the protrusion;
- an isolation structure in the bulk;
- and
- a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion, and the isolation structure is above a portion of the photosensitive device in the bulk.
2 more elements
A pixel, comprising:
- a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk;
- a protrusion doping region in the protrusion;
- and
- a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion, and the photosensitive device extends across less than an entire width of the protrusion.
1 more element
Dependencies are inferred from the claim text.