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US 12,183,763 B2Granted
Semiconductor imaging apparatus and method
AssigneeX-FAB Global Services GmbH
InventorsDaniel Gäbler, Alexander Zimmer
Life of this patent
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Abstract
A semiconductor imaging apparatus including a light detection device in a silicon substrate, an optical filter arranged to filter light incident on the light detection device and including a gap for allowing unfiltered light to reach the silicon substrate, an isolation structure for stopping light generated charge carriers in the silicon substrate from reaching the light detection device, and a photodiode for detecting the charge carriers.
Claims14
A semiconductor imaging apparatus comprising:
- a plurality of light detection devices in a silicon substrate;
- an optical filter arranged to filter light incident on said light detection devices and comprising gaps for allowing unfiltered light to reach said silicon substrate between neighbouring light detection devices;
- an isolation structure for stopping light generated charge carriers in said silicon substrate from reaching said light detection devices;
- and
- a plurality of photodiodes for detecting said charge carriers in said silicon substrate, wherein said isolation structure comprises a buried oxide layer and deep trench isolation, DTI, wherein said DTI separates said light detection devices from said photodiodes, and wherein said photodiodes are connected to a buried layer in said silicon substrate below said buried oxide layer, so that said photodiodes can detect charge carriers generated in said silicon substrate below said buried oxide layer.
2 more elements
A semiconductor imaging apparatus comprising:
- a plurality of light detection devices in a silicon substrate;
- an optical filter arranged to filter light incident on said light detection devices and comprising gaps for allowing unfiltered light to reach said silicon substrate between neighbouring light detection devices;
- and
- an isolation structure for stopping light generated charge carriers in said silicon substrate from reaching said light detection devices, wherein said isolation structure comprises a plurality of isolation wells surrounding respective light detection devices of said plurality of light detection devices and wherein each isolation well is a photodiode for detecting said charge carriers in said silicon substrate,
- wherein said semiconductor imaging apparatus is arranged to perform time of flight, TOF, measurements based on output from said light detection devices, and wherein said semiconductor imaging apparatus is arranged to perform visible, VIS, light imaging based on output from said photodiodes.
2 more elements
Dependencies are inferred from the claim text.