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US 12,183,762 B2Granted
Image sensing device
AssigneeSK hynix Inc.
InventorsJae Hyung Jang, Jong Chae Kim, Jae Won Lee
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Abstract
An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.
Claims18
An image sensing device comprising:
- a pixel array
- wherein the pixel array includes:
- a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light;
- a bias field region doped with impurities and disposed along an edge of the sensing region;
- and
- a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.
3 more elements
An image sensing device comprising:
- a sensing region including a plurality of unit pixels, each unit pixel including a control region for receiving a first voltage or a second voltage and a detection region for capturing electrons moving by the first voltage or the second voltage;
- a bias field region disposed along an edge of the sensing region;
- a contact portion connected to the bias field region to apply a bias voltage to the bias field region;
- and
- a bias voltage controller configured to transfer the bias voltage to the contact portion,
- wherein the bias voltage is lower than each of the first voltage and the second voltage.
3 more elements
An image sensing device comprising:
- a sensing region including a plurality of unit pixels formed in a substrate to generate the photocharges and capture the generated photocharges;
- a bias field region doped with a first impurity and formed from a surface of the substrate to a first depth in the substrate along an edge of the sensing region;
- a passivation region doped with a first impurity and formed from the surface of the substrate to a second depth in the substrate over the sensing region;
- and
- a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharges,
- wherein the first depth is greater than the second depth.
3 more elements
Dependencies are inferred from the claim text.