Solid-state imaging device

A solid-state imaging device, comprising:

• a first substrate including a photoelectric converter and an electric charge accumulation section for each pixel, wherein a signal electric charge generated in the photoelectric converter is accumulated in the electric charge accumulation section;
• a second substrate including a semiconductor layer and a pixel transistor, wherein the semiconductor layer is stacked on the first substrate, and wherein the pixel transistor includes a gate electrode opposed to the semiconductor layer, and reads the signal electric charge of the electric charge accumulation section;
• and
• a through electrode that is provided in the first substrate and the second substrate, wherein the through electrode electrically couples the first substrate and the second substrate to each other, wherein the through electrode is partially in contact with the gate electrode, and wherein the gate electrode has a front surface opposed to the first substrate, and a side surface that is provided in a direction intersecting with the front surface and is in contact with the through electrode.

A solid-state imaging device, comprising:

• a first substrate including a photoelectric converter and an electric charge accumulation section for each pixel, wherein a signal electric charge generated in the photoelectric converter is accumulated in the electric charge accumulation section;
• a second substrate including a semiconductor layer and a pixel transistor, wherein the semiconductor layer is stacked on the first substrate, and wherein the pixel transistor includes a gate electrode opposed to the semiconductor layer, and reads the signal electric charge of the electric charge accumulation section;
• and
• a through electrode that is provided in the first substrate and the second substrate, wherein the through electrode electrically couples the first substrate and the second substrate to each other, and wherein the through electrode is partially in contact with the gate electrode, wherein a through hole is provided in the gate electrode, and wherein the through electrode is in contact with an inner peripheral surface of the through hole.

A solid-state imaging device, comprising:

• a first substrate including a photoelectric converter and an electric charge accumulation section for each pixel, wherein a signal electric charge generated in the photoelectric converter is accumulated in the electric charge accumulation section;
• a second substrate including a semiconductor layer and a pixel transistor, wherein the semiconductor layer is stacked on the first substrate, wherein the pixel transistor includes a gate electrode opposed to the semiconductor layer, and wherein the pixel transistor reads the signal electric charge of the electric charge accumulation section;
• a through electrode that is provided in the first substrate and the second substrate, wherein the through electrode electrically couples the first substrate and the second substrate to each other, and wherein the through electrode is partially in contact with the gate electrode;
• and
• a shared coupling section that is coupled to a plurality of the electric charge accumulation sections and is provided in the first substrate, wherein—an end of the through electrode is in contact with the shared coupling section.