Image sensor and method of making

An image sensor comprising:

• a plurality of pixels, wherein each of the plurality of pixels comprises:
• a photodiode;
• a color filter over the photodiode;
• a first transparent conductive layer over the color filter;
• an electro-optical (EO) film over the first transparent conductive layer, wherein a material of the EO film is configured to change refractive index in response to application of an electrical field;
• a microlens over the EO film;
• a second transparent conductive layer over the microlens;
• and
• a pillar of transparent conductive material electrically connecting the first transparent conductive layer and the second transparent conductive layer.

A method of making an image sensor, the method comprising:

• forming a photodiode structure;
• forming a color filter over the photodiode structure;
• forming a first transparent conductive layer over the color filter;
• forming an electro-optical (EO) film over the first transparent conductive layer, wherein a material of the EO film is configured to change refractive index in response to application of an electrical field;
• forming a microlens over the EO film;
• and
• forming a second transparent conductive layer over the microlens, wherein the second transparent conductive layer is electrically connected to the first transparent conductive layer.