Semiconductor device

A semiconductor device, comprising:

• a first channel pattern and a second channel pattern on a substrate, each of the first and second channel patterns including vertically-stacked semiconductor patterns;
• a first source/drain pattern connected to the first channel pattern;
• a second source/drain pattern connected to the second channel pattern, the first and second source/drain patterns having different conductivity types from each other;
• a first contact plug inserted in the first source/drain pattern, and a second contact plug inserted in the second source/drain pattern;
• a first interface layer interposed between the first source/drain pattern and the first contact plug;
• a second interface layer interposed between the second source/drain pattern and the second contact plug;
• and
• interlayer insulating layers covering the first and second source/drain patterns,
• wherein two portions of the first contact plug are continuously connected to each other and two portions of the second contact plug are continuously connected to each other,
• wherein the first and second interface layers including different metallic elements from each other.

A semiconductor device, comprising:

• a substrate having a first active region and a second active region;
• a first channel pattern on the first active region, and a second channel pattern on the second active region, and each of the first channel pattern and the second channel pattern including vertically-stacked semiconductor patterns;
• a gate electrode extended in a first direction to cross the first and second channel patterns;
• a first source/drain pattern disposed at a first side of the gate electrode and connected to the first channel pattern;
• a second source/drain pattern disposed at a second side of the gate electrode and connected to the second channel pattern, and having a different conductivity type from the first source/drain pattern;
• an interlayer insulating layer covering the gate electrode, the first source/drain pattern, and the second source/drain pattern;
• a first contact plug including a first portion, which is buried in the first source/drain pattern, and a second portion, which penetrates the interlayer insulating layer and is connected to the first portion;
• a second contact plug including a third portion, which is buried in the second source/drain pattern, and a fourth portion, which penetrates the interlayer insulating layer and is connected to the third portion;
• a first interface layer interposed between the first portion and the first source/drain pattern;
• and
• a second interface layer interposed between the third portion and the second source/drain pattern, the first and second interface layers including different elements from each other,
• wherein the first and second interface layers include at least one of titanium silicide (TiSi), tungsten silicide (WSi), cobalt silicide (CoSi), nickel silicide (NiSi), molybdenum silicide (MoSi), or tantalum silicide (TaSi),
• wherein a thickness of the first interface layer and a thickness of the second interface layer are different from each other.