Semiconductor devices and methods of manufacture

A method, comprising:

• forming a first plurality of fin structures for a first electronic device in a first region of a substrate;
• forming a second plurality of fin structures for a second electronic device in a second region of the substrate;
• forming a shallow trench isolation (STI) layer between the first plurality of fin structures and between the second plurality of fin structures;
• forming a photoresist layer over the first plurality of fin structures and over first portions of the STI layer between the first plurality of fin structures;
• etching, in a first etch operation, second portions of the STI layer between the second plurality of fin structures to an intermediate fin height between top surfaces of the second plurality of fin structures and top surfaces of the second portions of the STI layer;
• removing the photoresist layer after the first etch operation;
• and
• etching, in a second etch operation after removing the photoresist layer, the first portions of the STI layer between the first plurality of fin structures and the second portions of the STI layer between the second plurality of fin structures.

A method, comprising:

• forming, in a first etch operation, a first recess in a first fin structure of a first device included on a semiconductor substrate,
• wherein the first recess is formed to a first depth between a first plurality of dummy gate structures of the first device in the first etch operation;
• forming, in a second etch operation subsequent to the first etch operation:
• a second recess in a second fin structure of a second device included on the semiconductor substrate,
• wherein the first device and the second device are included in different regions of the semiconductor substrate, and
• wherein the second recess is formed to a second depth between a second plurality of dummy gate structures of the second device;
• and
• the first recess to have a third depth that is greater than the first depth,
• wherein the third depth is greater than the second depth;
• forming a first epitaxial region in the first recess for the first device;
• and
• forming a second epitaxial region in the second recess for the second device,
• wherein a first height of the first epitaxial region is greater than a second height of the second epitaxial region.