Monolithic conductive columns in a semiconductor device and associated methods

A semiconductor device, comprising:

• a semiconductor die, including:
• a semiconductor substrate having a first surface and a second surface opposite the first surface,
• a conductive pad at the first surface of the semiconductor substrate,
• a first dielectric layer disposed over the first surface and the conductive pad,
• an opening extending through the semiconductor substrate from the conductive pad at the first surface to the second surface, and defining an opening side wall,
• a non-conductive liner coating at least the opening side wall,
• a plug of non-conductive material filling the opening, and
• a second dielectric layer covering the second surface and the plug;
• and
• a molding material laterally adjacent to the semiconductor die.

A method of manufacturing a semiconductor device assembly, comprising:

• providing a plurality of semiconductor devices, each having a semiconductor substrate with a first surface and a second surface, a conductive pad at the first surface, and a first opening extending through the semiconductor substrate from the conductive pad at the first surface to the second surface;
• filling the first opening of each of the plurality of semiconductor devices with a sacrificial plug of non-conductive material;
• stacking the plurality of semiconductor devices such that the plug of each of the plurality of semiconductor devices is vertically aligned;
• laterally encasing the stacked plurality of semiconductor devices in a molding material;
• forming a device opening through the stacked plurality of semiconductor devices and a mold opening through the molding material, the device opening extending through the conductive pad and the sacrificial plug of non-conducive material of each of the plurality of semiconductor devices;
• and
• disposing a monolithic conductive column in each of the device opening and the mold opening, wherein the monolithic conductive column in the device opening is in electrical communication with the conductive pad of each of the stacked plurality of semiconductor devices and is electrically isolated from the semiconductor substrate of each of the stacked plurality of semiconductor devices by a remaining portion of the sacrificial plug of non-conductive material, and wherein the stacked plurality of semiconductor devices is isolated from the monolithic conductive column in the mold opening by the molding material.