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US 12,183,701 B2Granted
Semiconductor device
AssigneeRohm Co., Ltd.
InventorsBungo Tanaka, Keiji Wada, Satoshi Kageyama
Life of this patent
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Abstract
A semiconductor device includes an insulating layer, a barrier electrode layer formed on the insulating layer, a Cu electrode layer that includes a metal composed mainly of copper and that is formed on a principal surface of the barrier electrode layer, and an outer-surface insulating film that includes copper oxide, that coats an outer surface of the Cu electrode layer, and that is in contact with the principal surface of the barrier electrode layer.
Claims20
A semiconductor device comprising:
- an insulating layer;
- a first metal layer arranged over the insulating layer;
- a second metal layer that is arranged over a part of the first metal layer and that includes a Cu layer, an Ni layer and a surface metal layer laminated in that order from the first metal layer;
- and
- a resin that selectively coats the second metal layer;
- wherein the Ni layer has a thickness smaller than a thickness of the Cu layer, and
- the surface metal layer has a thickness smaller than a thickness of the Ni layer and is exposed from the resin.
4 more elements
Dependencies are inferred from the claim text.