Semiconductor device having a metal pad and a protective layer for corrosion prevention due to exposure to halogen

A semiconductor structure, comprising:

• a passivation structure;
• a passive device disposed in the passivation structure;
• a contact via extending through the passivation structure and the passive device;
• a metal pad disposed over the passivation structure and electrically coupled to the contact via;
• a first dielectric layer disposed directly on the metal pad;
• a second dielectric layer disposed over the first dielectric layer;
• a protective layer disposed over the second dielectric layer;
• a polymeric material disposed over the protective layer;
• and
• a bump feature extending through the polymeric material and in direct contact with the metal pad, the polymeric material and the protective layer.

A semiconductor structure, comprising:

• an aluminum-containing metal pad over a substrate;
• a first dielectric layer disposed directly on the aluminum-containing metal pad;
• a second dielectric layer disposed over the first dielectric layer;
• a protective layer disposed over the second dielectric layer and the aluminum-containing metal pad;
• a polymeric material disposed over the protective layer;
• and
• a bump feature extending through the polymeric material and in direct contact with the aluminum-containing metal pad, the polymeric material and the protective layer,
• wherein the polymeric material is spaced apart from a top surface of the aluminum-containing metal pad by the protective layer,
• wherein sidewalls of the first dielectric layer and the second dielectric layer are spaced apart from the bump feature by the protective layer and the polymeric material.