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US 12,183,691 B2Granted
Semiconductor structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Wen Chen, Hung-Jui Kuo, Ming-Che Ho
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Abstract
A semiconductor structure and a method of forming the same are disclosed. A method of forming a semiconductor structure includes the following operations. An insulating layer is formed over a substrate. A metal feature is formed in the insulating layer. An argon-containing plasma treatment is performed to the insulating layer and the metal feature.
Claims20
A semiconductor structure, comprising:
- a conductive layer structure over a first device;
- first pads and second pads over the conductive layer structure;
- an argon-containing layer over an uppermost insulating layer of the conductive layer structure and aside the first pads and the second pads;
- and
- connectors over the first pads,
- wherein the argon-containing layer comprises a carbon atom content of 75 at % or more and an argon atom content of 0.2-2 at %.
3 more elements
A semiconductor structure, comprising:
- an insulating layer disposed over a substrate;
- a metal feature having a first portion embedded in the insulating layer, and a second portion on the first portion and over the insulating layer;
- and
- an argon-containing layer disposed in a surface portion of the insulating layer, located in contact with the second portion but separated from the first portion of the metal feature,
- wherein the argon-containing layer has a water contact angle of 70° to 120°.
2 more elements
A semiconductor structure, comprising:
- an insulating layer disposed over a substrate;
- a metal feature having a first portion embedded in the insulating layer, and a second portion on the first portion and over the insulating layer;
- and
- an argon-containing layer disposed in a surface portion of the insulating layer, located in contact with the second portion but separated from the first portion of the metal feature,
- wherein the argon-containing layer comprises a carbon atom content of 75 at % or more and an argon atom content of 0.2-2 at %.
2 more elements
Dependencies are inferred from the claim text.