Semiconductor device including capacitor and resistor

A method for forming a semiconductor device, comprising:

• forming a first Si-rich dielectric material over a plurality of first interconnect structures, wherein the first Si-rich dielectric material has a plurality of silicon nanocrystals;
• depositing a conductive material over the first Si-rich dielectric material;
• depositing a dielectric material over the conductive material;
• etching the conductive material and the dielectric material to concurrently define a thin film of a resistor formed by a first segment of the conductive material, a bottom plate of a capacitor formed by a second segment of the conductive material, a resistor dielectric layer of the resistor formed by a first segment of the dielectric material, and a capacitor dielectric layer of the capacitor formed by a second segment of the dielectric material;
• forming a top plate of the capacitor over the capacitor dielectric layer,
• wherein the thin film and the bottom plate of the capacitor each has a first thickness, the resistor dielectric layer and the capacitor dielectric layer each has a second thickness, and the first thickness is smaller than the second thickness;
• and
• forming a second Si-rich dielectric material over the capacitor and the resistor, wherein the second Si-rich dielectric material has a plurality of silicon nanocrystals, and wherein the capacitor and the resistor are partially wrapped by the first Si-rich dielectric material and the second Si-rich dielectric material.

A method for forming a semiconductor device, comprising:

• forming a first Si-rich dielectric layer over a first interconnect structure, a second interconnect structure, and a third interconnect structure;
• depositing a conductive material over the first Si-rich dielectric layer;
• depositing a dielectric material over the conductive material;
• performing a single patterning process to concurrently etch the conductive material and the dielectric material to define a thin film of a resistor formed by a first segment of the conductive material, a bottom plate of a capacitor formed by a second segment of the conductive material, a resistor dielectric layer of the resistor formed by a first segment of the dielectric material, and a capacitor dielectric layer of the capacitor formed by a second segment of the dielectric material;
• forming a top plate of the capacitor over the capacitor dielectric layer;
• forming a second Si-rich dielectric material over the capacitor and the resistor, wherein the second Si-rich dielectric material has a plurality of silicon nanocrystals, and wherein the capacitor and the resistor are partially wrapped by the first Si-rich dielectric material and the second Si-rich dielectric material;
• and
• forming a fourth interconnect structure over the top plate of the capacitor,
• wherein the thin film and the bottom plate of the capacitor each has a first thickness, the resistor dielectric layer and the capacitor dielectric layer each has a second thickness, and the first thickness is different from the second thickness.