Thin-film transistors and MIM capacitors in exclusion zones

An integrated circuit structure, comprising:

• a semiconductor substrate having a zone with metal oxide semiconductor (MOS) transistors therein, and having a zone that excludes MOS transistors;
• a back-end-of-line (BEOL) structure above the semiconductor substrate;
• and
• a first metal-insulator-metal (MIM) capacitor and a second MIM capacitor in the BEOL structure, the first MIM capacitor vertically over the zone that excludes MOS transistors, and the second MIM capacitor vertically over the zone with MOS transistors.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a semiconductor substrate having a zone with metal oxide semiconductor (MOS) transistors therein, and having a zone that excludes MOS transistors;
• a back-end-of-line (BEOL) structure above the semiconductor substrate;
• and
• a first thin-film transistor (TFT) and a second TFT in the BEOL structure, the first TFT vertically over the zone that excludes MOS transistors, and the second TFT vertically over the zone with MOS transistors.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a semiconductor substrate having a zone with metal oxide semiconductor (MOS) transistors therein, and having a zone that excludes MOS transistors;
• a back-end-of-line (BEOL) structure above the semiconductor substrate;
• and
• a first metal-insulator-metal (MIM) capacitor and a second MIM capacitor in the BEOL structure, the first MIM capacitor vertically over the zone that excludes MOS transistors, and the second MIM capacitor vertically over the zone with MOS transistors.

An integrated circuit structure, comprising:

• a semiconductor substrate having a zone with metal oxide semiconductor (MOS) transistors therein, and having a zone that excludes MOS transistors;
• a back-end-of-line (BEOL) structure above the semiconductor substrate;
• a thin-film transistor (TFT) in the BEOL structure, the TFT vertically over the zone that excludes MOS transistors;
• and
• a through-silicon via (TSV) structure extending through the BEOL structure and the semiconductor substrate, the TSV structure in the zone that excludes MOS transistors.

An integrated circuit structure, comprising:

• a semiconductor substrate having a zone with metal oxide semiconductor (MOS) transistors therein, and having a zone that excludes MOS transistors;
• a back-end-of-line (BEOL) structure above the semiconductor substrate;
• a metal-insulator-metal (MIM) capacitor in the BEOL structure, the first MIM capacitor vertically over the zone that excludes MOS transistors;
• and
• a through-silicon via (TSV) structure extending through the BEOL structure and the semiconductor substrate, the TSV structure in the zone that excludes MOS transistors.