US 12,183,663 B2Granted

Semiconductor device

AssigneeRohm Co., Ltd.

InventorsKazuki Okuyama, Shuntaro Takahashi, Motoharu Haga, Shingo Yoshida, Kazuhisa Kumagai, Hajime Okuda

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Abstract

A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

Claims16

Dependent claims

A semiconductor device, comprising:

a semiconductor element comprising:
a substrate having a transistor formation region in which a transistor is formed and which is shaped to be non-quadrangular, and
an electrode pad on the transistor formation region;
a surface protection film that covers the electrode pad;
and
a first connection member connected to the electrode pad at one location, wherein
the first connection member is a bonding wire,
the electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad,
in the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region to increase active clamp capacity,
a center position of the connection region coincides with the center of gravity position of the transistor formation region, and
the surface protection film has an opening for the connection region.

8 more elements

A semiconductor device, comprising:

a semiconductor element comprising:
a substrate having a transistor formation region in which a transistor is formed and which is shaped to be non-quadrangular, and
an electrode pad on the transistor formation region;
a surface protection film that covers the electrode pad;
and
a first connection member connected to the electrode pad at multiple locations, wherein
the first connection member is a bonding wire,
the transistor formation region is divided into divided regions having equal areas in accordance with the number of locations where the first connection member is connected,
the electrode pad is arranged to cover a center of gravity of each of the divided regions in a plan view,
in the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of each of the divided regions to increase active clamp capacity,
a center position of the connection region coincides with the center of gravity position of each of the divided regions, and
the surface protection film has an opening for the connection region.

9 more elements

A semiconductor device, comprising:

a semiconductor element comprising:
a substrate having a transistor formation region in which a transistor is formed and which is shaped to be non-quadrangular, and
an electrode pad on the transistor formation region;
a surface protection film that covers the electrode pad;
and
first connection members connected to the electrode pad, wherein
each of the first connection members is a bonding wire,
the transistor formation region is divided into divided regions having equal areas in accordance with the number of the first connection members,
the electrode pad is arranged to cover a center of gravity of each of the divided regions in a plan view,
in the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of each of the divided regions to increase active clamp capacity,
a center position of the connection region coincides with the center of gravity position of each of the divided regions, and
the surface protection film has an opening for the connection region.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/510,204Filed 15 Nov 2023 · continuation
Priority: JP 2018-07611311 Apr 2018
Published: US 2024/0087996 A114 Mar 2024
Granted: 31 Dec 2024
Term ends: Not estimatedThe source records don’t support an estimate.

Classification56 codes

H10W 70/481
Leadframes: for devices being provided for in groups H10D8/00 - H10D48/00
H10W 76/48
Fillings: fillings including materials for absorbing or reacting with moisture or other undesired substances
H10D 10/421
Vertical BJTs: having both emitter-base and base-collector junctions ending at the same surface of the body
H10D 30/0297
Of vertical dmos [vdmos] fets: using recessing of the gate electrodes, e.g. to form trench gate electrodes

Family

PCT/JP2019/015863Parent of this continuation · filed 11 Apr 2019
US 2024/0087996 A1Pre-grant publication · published 14 Mar 2024
Application17/044,658Parent of this continuation
US 12,021,012 B2Parent of this continuation
US 2021/0098346 A1Published application
US 12,183,663 B2This patent

From the US filing history. Foreign family members aren’t listed.

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