Back to results
US 12,183,655 B2Granted
Semiconductor device with enhanced thermal dissipation and method for making the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYang-Che Chen, Chen-Hua Lin, Huang-Wen Tseng, Victor Chiang Liang, Chwen-Ming Liu
Life of this patent
Estimating the term…
Abstract
A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of ≥50 W/mK.
Claims20
A semiconductor device, comprising:
- a chip disposed over a substrate;
- a metal pillar disposed over a main surface of the chip;
- a solder layer comprising a solder disposed on the metal pillar;
- a lid attached to the chip via the solder layer;
- and
- a thermal interface material layer between the main surface of the chip and the lid,
- wherein the solder layer and the thermal interface material layer are different materials,
- wherein the substrate, chip, metal pillar, and lid are arranged along a first direction,
- wherein the metal pillar extends beyond the main surface of the chip toward the lid in the first direction in a space between the main surface of the chip and the lid, and
- wherein the main surface of the chip extends along a second direction perpendicular to the first direction.
7 more elements
A semiconductor device, comprising:
- a chip disposed over a substrate;
- a plurality of bonding pads disposed on a main surface of a chip;
- a plurality of metal pillars disposed on respective ones of the plurality of bonding pads, wherein each bonding pad has a pillar disposed thereon;
- a solder layer comprising a solder disposed over a surface of each metal pillar;
- a lid attached to the chip via the solder layer;
- and
- a thermal interface material layer disposed between each of the plurality of metal pillars and between the main surface of the chip and the lid,
- wherein the solder layer and the thermal interface material layer are different materials,
- wherein the substrate, chip, metal pillars, and lid are arranged along a first direction,
- wherein each of the metal pillars extends beyond the main surface of the chip toward the lid in the first direction in a space between the main surface of the chip and the lid, and
- wherein the main surface of the chip extends along a second direction perpendicular to the first direction.
8 more elements
A semiconductor device, comprising:
- a chip disposed over a first main surface of a substrate;
- first solder bumps connecting the chip to the first main surface of the substrate;
- second solder bumps disposed on a second main surface of the substrate;
- conductive vias in the substrate connecting the first solder bumps to the second solder bumps;
- a plurality of bonding pads disposed on a first main surface of the chip;
- a metal pillar disposed on each of the plurality of bonding pads;
- a solder layer disposed over each of the metal pillars;
- a thermal interface material disposed between each of the metal pillars, wherein the thermal interface material and the solder layer are formed of different materials;
- and
- a lid in contact with the substrate and attached to the chip via the solder layer and the metal pillars,
- wherein the substrate, chip, metal pillars, and lid are arranged along a first direction,
- wherein each of the metal pillars extends beyond the main surface of the chip toward the lid in the first direction in a space between the main surface of the chip and the lid, and
- wherein the main surface of the chip extends along a second direction perpendicular to the first direction.
10 more elements
Dependencies are inferred from the claim text.