Insulating substrate and power module using the same
AssigneesHyundai Motor Company, Kia Corporation
InventorsHyeon Uk Kim, Jun Hee Park, Sung Won Park
Life of this patent
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Abstract
An insulating substrate provided between the semiconductor chip and a cooler in the dual-side cooled power module includes: an inner metal layer configured to face the semiconductor chip; an outer metal layer configured to face the cooler; and an insulating layer interposed between the inner metal layer and the outer metal layer, wherein at least one inner thermal spreader of a plurality of inner thermal spreader is inserted into the inner metal layer.
Claims14
An insulating substrate provided between a semiconductor chip and a cooler in a power module, the insulating substrate comprising:
- an inner metal layer configured to face the semiconductor chip;
- an outer metal layer configured to face the cooler;
- and
- an insulating layer interposed between the inner metal layer and the outer metal layer,
- wherein at least one inner thermal spreader of a plurality of inner thermal spreader is inserted into the inner metal layer,
- wherein the inner thermal spreader is disposed on a virtual surface where the inner thermal spreader is disposed inside the inner metal layer, including at least an edge of a virtual area transferred vertically from an area in which the semiconductor chip is disposed, along a periphery of the virtual area.
A power module in which a semiconductor chip is provided between a pair of coolers, the power module comprising:
- a pair of insulating substrates provided between the semiconductor chip and the pair of coolers, respectively,
- each of the insulating substrates including:
- an inner metal layer configured to face the semiconductor chip and having at least one inner thermal spreader inserted into the inner metal layer;
- an outer metal layer configured to face a corresponding cooler;
- and
- an insulating layer interposed between the inner metal layer and the outer metal layer,
- wherein the inner thermal spreader is disposed on a virtual surface where the inner thermal spreader is disposed inside the inner metal layer, including at least an edge of a virtual area transferred vertically from an area in which the semiconductor chip is disposed, along a periphery of the virtual area.
Dependencies are inferred from the claim text.