Semiconductor device with a dielectric between portions

A method, comprising:

• forming a plurality of channels extending in a first surface of substrate, the forming the plurality of channels including forming at least one first channel with a first depth and forming at least one second channel with a second depth different from the first depth, and the first and second depths extend in the first surface in a direction transverse to the first surface;
• depositing a polymer in each of the plurality of channels and the second channel;
• grinding a second surface of the substrate opposite to the first surface;
• and
• separating the substrate into a plurality of semiconductor devices, the separating of the semiconductor devices including each respective semiconductor device of the plurality of semiconductor devices including at least one of the respective channels of the plurality of channels.

A method, comprising:

• forming a passivation layer on a first surface of a substrate;
• after forming the passivation layer, forming a plurality of channels extending into the first surface of substrate by removing portions of the substrate at the first surface of the substrate, the forming the plurality of channels including forming respective channels of the plurality of channels defining a plurality of shaped portions in the substrate;
• after forming the plurality of channels, depositing a polymer in each respective channel of the plurality of channels and defining a surface of the polymer flush with the first surface of the substrate;
• and
• after depositing the polymer in each respective channel of the plurality of channels, separating the substrate into a plurality of semiconductor devices, the separating of the semiconductor devices including each respective semiconductor device of the plurality of semiconductor devices including at least one respective shaped portion at a central region of the respective semiconductor device.