Semiconductor device and methods of formation

A method, comprising:

• forming a first fin structure having a first width above a semiconductor substrate;
• forming a second fin structure having a second width above the semiconductor substrate;
• depositing a dielectric layer between the first fin structure and the second fin structure;
• etching a portion of the dielectric layer to form a shallow trench isolation (STI) region between the first fin structure and the second fin structure,
• wherein a top surface of the STI region is sloped or slanted as a result of the etching;
• forming, in a recess above of the STI region, a cladding layer over a first sidewall of the first fin structure, over a second sidewall of the second fin structure, and over the top surface of the STI region;
• and
• removing a portion of the cladding layer from the top surface of the STI region to leave a first cladding sidewall layer along the first sidewall and a second cladding sidewall layer along the second sidewall.

A method, comprising:

• forming a plurality of fin structures above a semiconductor substrate;
• forming a dielectric layer above the semiconductor substrate and in between the plurality of fin structures;
• removing portions of the dielectric layer in between the plurality of fin structures to form at least a first shallow trench isolation (STI) region, a first recess above the first STI region, a second STI region, and a second recess above the second STI region,
• wherein a height of the first STI region is greater than a height of the second STI region;
• forming a cladding layer over sidewalls of the first recess, over sidewalls of the second recess, over a top surface of the first STI region, and over a top surface of the second STI region;
• and
• removing portions of the cladding layer from the top surface of the first STI region and the top surface of the second STI region to leave a first cladding sidewall layer along a first sidewall of the first recess, a second cladding sidewall layer along a second sidewall of the first recess, a third cladding sidewall layer along a first sidewall of the second recess, and a fourth cladding sidewall along a second sidewall of the second recess.