Integrated circuit and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Wei Huang, Yi-Nien Su, Yu-Yu Chen, Jyu-Horng Shieh
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Abstract
An integrated circuit structure and method of manufacturing the same are provided. The integrated circuit structure includes a plurality of conductive features within a dielectric layer overlying a substrate, a barrier layer disposed between each of the plurality of the conductive features and the dielectric layer, a protection layer between sidewalls of the barrier layer and the dielectric layer and a void disposed within the dielectric layer at a position between two adjacent conductive features of the plurality of the conductive features.
Claims20
An integrated circuit structure, comprising:
- a dielectric layer over a substrate;
- a conductive feature over the substrate and surrounded by the dielectric layer;
- an insulating protection layer between sidewalls of the conductive feature and the dielectric layer;
- a conductive cap layer over the conductive feature;
- and
- a void sealed within the dielectric layer and adjacent to the conductive feature,
- wherein an upper surface of the dielectric layer is substantially flushed with an upper surface of the conductive feature.
A method for fabricating an integrated circuit structure, comprising:
- forming a first opening in a dummy layer over a substrate;
- forming a conductive feature in the first opening;
- forming a first cap layer on the conductive feature, wherein portions of the dummy layer are exposed through the first cap layer;
- removing the dummy layer entirely to form a second opening over the substrate;
- filling the second opening with a dielectric layer, wherein a void is sealed within the dielectric layer;
- and
- removing the first cap layer, a top portion of the conductive feature and a top portion of the dielectric layer.
A method for fabricating an integrated circuit structure, comprising:
- receiving a substrate comprising a first dielectric layer and a second dielectric layer over the first dielectric layer;
- forming a first opening in the first dielectric layer and the second dielectric layer;
- forming a conductive feature in the first opening;
- removing the second dielectric layer to form a second opening over the substrate;
- forming a third dielectric layer covering the conductive feature and filling in the second opening with a void entirely sealed within;
- removing a top portion of the conductive feature and a top portion of the third dielectric layer;
- and
- forming an etch stop layer over the conductive feature and the third dielectric layer.
Dependencies are inferred from the claim text.