Multi process air gap formation
AssigneeApplied Materials, Inc.
InventorsJohn Hautala, Charith Nanayakkara
Life of this patent
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Abstract
A method may include providing an array of patterned features on a substrate, the array of patterned features characterized by a spacing. The method may include directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of a patterned feature of the array of patterned features forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features. The method may also include directing a depositing species in a second exposure to the array of patterned features, wherein an array of voids is formed between adjacent patterned features.
Claims16
A method, comprising:
- providing an array of patterned features on a substrate;
- directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of a patterned feature of the array of patterned features forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features;
- and
- directing a depositing species in a second exposure to the array of patterned features, wherein an array of voids is formed between adjacent patterned features,
- wherein a patterned feature of the array of patterned features comprises a conductive portion, and an outer layer, comprising an insulator material, disposed over an outer surface of the conductive portion,
- wherein the outer layer comprises an initial thickness before the first exposure, wherein an ion dose and ion energy of the sputtering species of the first exposure is effective to remove a targeted thickness of the outer layer, wherein the targeted thickness is less than the initial thickness.
A method, comprising:
- providing an array of patterned features on a substrate, the array of patterned features comprising a conductive portion, and an outer layer, comprising an insulator material, disposed over an outer surface of the conductive portion;
- directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of the outer layer forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features;
- and
- directing a depositing species in a second exposure to the array of patterned features, wherein an array of voids is formed between adjacent patterned features,
- wherein the outer layer comprises an initial thickness before the first exposure, wherein an ion dose and ion energy of the sputtering species of the first exposure is effective to remove a targeted thickness of the outer layer, wherein the targeted thickness is less than the initial thickness.
A method of forming an airgap device structure, comprising:
- providing an array of patterned features on a substrate, the array of patterned features, comprising a conductive portion, and an outer layer, comprising an insulator material, disposed over an outer surface of the conductive portion;
- directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of the outer layer forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features, and wherein the sputtering species do not strike a bottom surface of the array of patterned features;
- and
- directing a depositing species in a second exposure to the array of patterned features, the second exposure comprising a directional plasma enhanced chemical vapor deposition process, wherein an array of voids is formed between adjacent patterned features, wherein the outer layer comprises an initial thickness before the first exposure, wherein an ion dose and ion energy of the sputtering species of the first exposure is effective to remove a targeted thickness of the outer layer, wherein the targeted thickness is less than the initial thickness.
Dependencies are inferred from the claim text.