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US 12,183,623 B2Granted
Semiconductor devices and methods for fabricating the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsHuidan Hou, Lan Yao, Yanwei Shi
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Abstract
A semiconductor device and a method for fabricating the same are disclosed. A substrate including a first device region and a second device region is provided. A first isolation structure is formed in the substrate of the first device region and a second isolation structure is formed in the substrate of the second device region. Ion implantation on the first isolation structure is performed. The first isolation structure and the second isolation structure are etched back to form a first recess in the first isolation structure and a second recess in the second isolation structure.
Claims20
A semiconductor device, comprising:
- a first isolation structure corresponding to a first device region of a substrate and comprising a first insulating layer in a first isolation groove of the first isolation structure;
- a second isolation structure corresponding to a second device region of the substrate and comprising a second insulating layer in a second isolation groove of the second isolation structure;
- a first gate structure arranged on sidewalls of the first isolation groove and comprising a first gate oxide layer and a first gate layer;
- and
- a second gate structure arranged on sidewalls of the second isolation groove and comprising a second gate oxide layer and a second gate layer,
- wherein:
- a depth of the first gate structure in a longitudinal direction, perpendicular to a lateral direction of the substrate, is greater than a depth of the second gate structure in the longitudinal direction;
- and
- the first gate layer is discontinuous in the first isolation groove.
6 more elements
A semiconductor device, comprising:
- a first semiconductor device arranged in a first region of a substrate and comprising a first insulating layer in a first isolation groove of the substrate and a first gate structure over the first insulating layer, wherein the first gate structure comprises:
- a first gate oxide layer arranged over sidewalls of the first isolation groove;
- a first gate layer arranged over the first gate oxide layer;
- and
- a first insulating material arranged over the first insulating layer and inserted between the first gate layer;
- and
- a second semiconductor device arranged in a second region of the substrate and comprising a second insulating layer in a second isolation groove of the substrate and a second gate structure over the second insulating layer, wherein the second gate structure comprises:
- a second gate oxide layer arranged over sidewalls of the second isolation groove;
- a second gate layer arranged over the second gate oxide layer;
- and
- a second insulating material arranged over the second insulating layer and inserted between the second gate layer,
- wherein:
- the first insulating material is identical to the second insulating material;
- and
- a thickness of the first gate oxide layer is greater than a thickness of the second gate oxide layer.
12 more elements
A semiconductor device, comprising:
- a first semiconductor device arranged in a first region of a substrate and comprising a first insulating layer in a first isolation groove of the substrate and a first gate structure over the first insulating layer, wherein the first gate structure comprises:
- a first gate oxide layer arranged over sidewalls of the first isolation groove;
- and
- a first gate layer arranged over the first gate oxide layer;
- and
- a second semiconductor device arranged in a second region of the substrate and comprising a second insulating layer in a second isolation groove of the substrate and a second gate structure over the second insulating layer, wherein the second gate structure comprises:
- a second gate oxide layer arranged over sidewalls of the second isolation groove;
- and
- a second gate layer arranged over the second gate oxide layer,
- wherein:
- a bottom of the first insulating layer in the first isolation groove is lower than a bottom of the second insulating layer in the second isolation groove in a longitudinal direction perpendicular to a lateral direction of the substrate.
8 more elements
Dependencies are inferred from the claim text.