Methods for adjusting surface topography of a substrate support apparatus

A method comprising:

• receiving a surface profile data map of a bottom surface of a semiconductor wafer, the surface profile data map derived from one or more of two-dimensional measurement data and three-dimensional measurement data;
• and
• based, at least in part on the surface profile data map, conforming a continuous flexible structure, disposed over mutually lateral adjacent support elements to approximate a surface profile of the bottom surface of the semiconductor wafer by selectively and independently adjusting levels of upper surfaces of the mutually lateral adjacent support elements using an actuator system operably coupled to each of the mutually lateral adjacent support elements, the continuous flexible structure comprising:
• portions of heat transfer material vertically overlying and within lateral boundaries of upper surfaces of the mutually lateral adjacent support elements;
• and
• portions of thermal insulating material vertically overlying and laterally overlapping the upper surfaces of pairs of the mutually lateral adjacent support elements, the portions of thermal insulating material laterally alternating with the portions of heat transfer material.

A method comprising:

• receiving a surface profile data map of a bottom surface of a semiconductor wafer, the surface profile data map derived from one or more of two-dimensional measurement data and three-dimensional measurement data;
• based, at least in part on the surface profile data map, conforming a continuous flexible structure to approximate a surface profile of the bottom surface of the semiconductor wafer by selectively and independently adjusting levels of upper surfaces of support elements underlying the continuous flexible structure using an actuator system underlying and operably coupled to each of the support elements, wherein:
• the continuous flexible support structure comprises portions of heat transfer material and portions thermal insulating material laterally alternating with the portions of heat transfer material;
• and
• the support elements are configured to vertically move independent of one another, lateral boundaries of at least some of the support elements overlapping lateral boundaries of the portions of heat transfer material of the continuous flexible support structure;
• and
• individually and selectively transferring thermal energy to, or from, respective locations of the semiconductor wafer using a thermal energy transfer device operably coupled to the portions of heat transfer material of the continuous flexible support structure.