Integrated dry processes for patterning radiation photoresist patterning

An integrated lithography system, comprising:

• a plurality of reaction chambers within a cluster, the plurality of reaction chambers comprising:
• a photoresist (PR) deposition chamber;
• a post-exposure bake (PEB) chamber;
• a development chamber;
• and
• an underlayer deposition chamber;
• a controller that includes one or more processors and one or more memory devices, wherein the one or more memory devices store computer-executable instructions for controlling the one or more processors to:
• receive a substrate in the PR deposition chamber;
• deposit a PR on a surface of the substrate within the PR deposition chamber via a dry process comprising mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant;
• after depositing the PR, receive the substrate in the PEB chamber, wherein portions of the PR have been chemically altered by exposure to radiation to create a patterned PR;
• treat the patterned PR within the PEB chamber to modify material properties of the patterned PR;
• and
• dry develop the patterned PR within the development chamber by removing either an exposed portion or an unexposed portion of the patterned PR by a dry development process comprising exposure to a chemical compound to form a PR mask;
• wherein the computer-executable instructions further include instructions for controlling the one or more processors to, prior to the computer-executable instruction to deposit a PR, deposit an underlayer on the surface of the substrate via a dry process, wherein the underlayer increases adhesion of the PR to the substrate.

An integrated lithography system, comprising:

• a plurality of reaction chambers within a cluster, the plurality of reaction chambers comprising:
• a photoresist (PR) deposition chamber;
• a post-exposure bake (PEB) chamber;
• a development chamber;
• and
• a pre-treatment chamber;
• a controller that includes one or more processors and one or more memory devices, wherein the one or more memory devices store computer-executable instructions for controlling the one or more processors to:
• receive a substrate in the PR deposition chamber;
• deposit a PR on a surface of the substrate within the PR deposition chamber via a dry process comprising mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant;
• after depositing the PR, receive the substrate in the PEB chamber, wherein portions of the PR have been chemically altered by exposure to radiation to create a patterned PR;
• treat the patterned PR within the PEB chamber to modify material properties of the patterned PR;
• and
• dry develop the patterned PR within the development chamber by removing either an exposed portion or an unexposed portion of the patterned PR by a dry development process comprising exposure to a chemical compound to form a PR mask;
• wherein the computer-executable instructions further include instructions for controlling the one or more processors to, prior to the computer-executable instruction to deposit the PR, treat the surface of the substrate via a dry process to cause more chemical functional groups on the surface of the substrate to improve PR adhesion to the substrate.