Method of determination of pretreatment conditions of heat treatment furnace, method of pretreatment of heat treatment furnace, heat treatment device, and manufacturing method and manufacturing device of heat-treated semiconductor wafer

A heat treatment device, comprising:

• a heat treatment furnace;
• at least one computer comprising a heat treatment furnace control process;
• and
• the at least one computer configured to implement:
• a pretreatment conditions determination process that determines pretreatment conditions of pretreating the heat treatment furnace, wherein the pretreatment is heating a furnace interior of the heat treatment furnace while supplying a gas thereinto,
• the pretreatment conditions determination process comprises:
• a candidate recording process that records a plurality of candidates of a combination of a type of the supply gas and a heating temperature;
• and
• an analysis process that includes calculating information recording, a score calculation process and a combination determination process comprising:
• recording the calculating information for calculating a score of the candidate recorded in the candidate recording process,
• determining the calculating information by a multi-component thermodynamics equilibrium calculation according to a type of a target metal identified as an object to be removed in the pretreatment, wherein the multi-component thermodynamics equilibrium calculation includes calculating, based on the target metal, an equilibrium volatilization gas partial pressure, a total sum of equilibrium substance amounts, a free energy ΔG0 of Gibbs of a volatilization reaction, and a free energy ΔG0 of Gibbs of a contamination reaction,
• calculating the score of the candidate recorded in the candidate recording process from the calculating information,
• determining, from the plurality of candidates, a combination of the type of the supply gas and the heating temperature to be adopted as pretreatment conditions of the heat treatment furnace, with the calculated score serving as an indicator;
• the heat treatment furnace control process receives information of the combination of the type of the supply gas and the heating temperature determined by the combination determination process, and transmits pretreatment execution information causing the heat treatment furnace to execute pretreatment according to the received information;
• and
• the heat treatment furnace receives the pretreatment execution information and executes pretreatment according to the pretreatment execution information to manufacture a heat-treated semiconductor wafer by heat treating a semiconductor wafer in the pretreated heat treatment furnace.