Semiconductor device with tiered pillar and manufacturing method thereof

A semiconductor device, comprising:

• a redistribution structure comprising a redistribution structure top side, a redistribution structure bottom side, and one or more conductive layers between the redistribution structure top side and the redistribution structure bottom side, the redistribution structure top side comprising top side conductive pads coupled to the one or more conductive layers;
• a semiconductor die comprising a die top side and a die bottom side, the die bottom side coupled to first conductive pads of the top side conductive pads;
• a conductive structure comprising an upper tier and a lower tier, wherein the lower tier comprises a lower tier upper end, a lower tier lower end, and a lower tier sidewall between the lower tier upper end and the lower tier lower end, wherein the lower tier lower end is coupled to a second conductive pad of the top side conductive pads, wherein the upper tier comprises an upper tier upper end, an upper tier lower end, and an upper tier sidewall between the upper tier upper end and the upper tier lower end, and wherein the upper tier lower end is coupled to the lower tier upper end;
• and
• an encapsulant comprising an encapsulant top side and an encapsulant bottom side, wherein the encapsulant encapsulates at least a portion of the semiconductor die and at least a portion of the redistribution structure top side, wherein the encapsulant is contacts the lower tier sidewall and the upper tier sidewall, and wherein the encapsulant top side does not cover the upper tier upper end.