Method of performing gap filling including filling trenches between dummy gate stacks on semiconductor fins/strips with semiconductor material

A method comprising:

• forming a first protruding semiconductor fin and a second protruding semiconductor fin protruding higher than isolation regions;
• forming a dummy gate stack on the first protruding semiconductor fin and the second protruding semiconductor fin;
• forming gate spacers on sidewalls of the dummy gate stack;
• growing a first epitaxy region and a second epitaxy region based on the first protruding semiconductor fin and the second protruding semiconductor fin, respectively;
• forming a dielectric layer on the first epitaxy region and the second epitaxy region;
• and
• depositing a semiconductor material on the dielectric layer.

A method comprising:

• forming a protruding semiconductor fin protruding higher than isolation regions;
• forming a first dummy gate stack and a second dummy gate stack on the protruding semiconductor fin;
• forming a dielectric layer on the first dummy gate stack and the second dummy gate stack;
• depositing a silicon layer filling a trench between the first dummy gate stack and the second dummy gate stack;
• planarizing the silicon layer to reveal hard masks in the first dummy gate stack and the second dummy gate stack;
• replacing the first dummy gate stack and the second dummy gate stack with replacement gate stacks;
• after the replacement gate stacks are formed, removing the silicon layer;
• and
• removing the dielectric layer.