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US 12,183,582 B2Granted
Film deposition method and element including film deposited by the film deposition method
AssigneeSamsung Electronics Co., Ltd.
InventorsChangseok Lee, Sangwon Kim, Keunwook Shin
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Abstract
A film deposition method may include preparing a non-planar substrate including a first surface, a second surface, and an inclined surface between the first surface and the second surface; depositing a film having a thickness deviation on the first surface, the second surface, and the inclined surface; and etching the film deposited on the first surface, the second surface, and the inclined surface. A height of the second surface may be different than a height of the first surface.
Claims17
A film deposition method comprising:
- preparing a non-planar substrate comprising a first surface, a second surface and an inclined surface between the first surface and the second surface, a height of the second surface being different than a height of the first surface;
- depositing a film having a thickness deviation on the first surface, the second surface, and the inclined surface, and wherein the depositing the film forms the film directly on the first surface, the second surface, and the inclined surface;
- and
- etching the film deposited on the first surface, the second surface, and the inclined surface, wherein
- after the etching of the film, the film is about 0.1 nm to about 100 nm thick on the first surface, the second surface, and the inclined surface,
- wherein the depositing the film and the etching the film are included in one cycle, and the cycle is performed a plurality of times, and
- wherein, after the cycle is performed a plurality of times,
- a ratio of a thickness of the film on the first surface to a thickness of the film on the second surface is about 0.9 to about 1.1, and
- a ratio of a thickness of the film on the inclined surface to the thickness of the film on the second surface is about 0.9 to about 1.1.
6 more elements
A film deposition method comprising:
- preparing a substrate comprising a micropattern;
- forming a film on the micropattern, the film comprising a material;
- and
- adjusting a thickness of the film to be equal to or less than a given distance from the micropattern,
- wherein the given distance ranges from about 0.1 nm to about 100 nm, and
- after the adjusting the thickness of the film, a ratio of a minimum thickness of the film and a maximum thickness of the film is within a range of about 0.9 to about 1.1,
- wherein the forming the film on the micropattern forms the film directly on the micropattern,
- wherein the forming of the film and the adjusting the thickness of the film are included in one cycle, and
- the cycle is performed a plurality of times.
6 more elements
Dependencies are inferred from the claim text.