Method for manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKun-Yu Lin, Yu-Ling Ko, Chih-Teng Liao
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a material layer over a semiconductor substrate; forming a plurality of spacer masks over the material layer; patterning the material layer into a plurality of masks below the spacer masks, wherein patterning the material layer comprises an atomic layer etching (ALE) process; and etching the semiconductor substrate through the masks.
Claims20
A method for manufacturing a semiconductor device, comprising:
- forming a material layer over a semiconductor substrate;
- forming a plurality of spacer masks over the material layer;
- patterning the material layer into a plurality of masks below the spacer masks, wherein patterning the material layer comprises an atomic layer etching (ALE) process, wherein the ALE process comprises a plurality of cycles, and each of the cycles comprises:
- depositing an etchant material layer over the material layer and the spacer masks by using a mixture of a fluoride-containing gas and an oxide-containing gas, such that a surface layer of the material layer adsorbs elements of the etchant material layer;
- and
- bombarding the surface layer of the material layer after depositing the etchant material layer;
- and
- etching the semiconductor substrate through the masks.
A method for manufacturing a semiconductor device, comprising:
- forming a material layer over a semiconductor substrate;
- forming a spacer mask over the material layer, wherein the material layer has a first portion covered the spacer mask and a second portion uncovered by the spacer mask, wherein forming the spacer mask comprises:
- forming a mandrel over the material layer;
- depositing a spacer layer over the mandrel and the material layer;
- etching the spacer layer into the spacer mask on a sidewall of the mandrel;
- and
- removing the mandrel from the material layer;
- depositing a first fluorocarbon layer over the material layer and the spacer mask, wherein the second portion of the material layer has a first surface layer in contact with the first fluorocarbon layer;
- removing the first surface layer of the second portion of the material layer from the material layer;
- after removing the first surface layer of the second portion of the material layer, depositing a second fluorocarbon layer over the material layer and the spacer mask, wherein the second portion of the material layer has a second surface layer in contact with the second fluorocarbon layer;
- removing the second surface layer of the second portion of the material layer from the material layer;
- and
- after removing the second surface layer of the second portion of the material layer, etching the semiconductor substrate through the material layer.
A method for manufacturing a semiconductor device, comprising:
- forming a material layer over a semiconductor substrate;
- forming a spacer mask over the material layer, wherein the material layer has a first portion covered the spacer mask and a second portion uncovered by the spacer mask;
- performing a plurality of ALE cycles, each of the ALE cycles comprising:
- conformally depositing an etchant material layer over the material layer and the spacer mask;
- and
- bombarding the material layer after conformally depositing the etchant material layer;
- and
- after the ALE cycles, etching the semiconductor substrate through the material layer.
Dependencies are inferred from the claim text.