Wafer treatment system and method of treating wafer

A wafer treatment system, comprising:

• a gas injection system, comprising:
• a gas injector coupled to a wafer treatment chamber and configured to inject a first gas into a treatment area defined by the wafer treatment chamber, wherein the first gas is used for treatment of a wafer in the treatment area;
• a first gas tube configured to conduct the first gas at a first temperature to the gas injector;
• a heating enclosure enclosing the gas injector and the first gas tube for heating the first gas such that the first gas flows through the first gas tube and the gas injector inside the heating enclosure;
• and
• a second gas tube configured to conduct heated gas to the heating enclosure to increase an enclosure temperature at the heating enclosure from a first enclosure temperature to a second enclosure temperature, wherein a temperature of the first gas is increased in the gas injector from the first temperature to a second temperature due to the second enclosure temperature at the heating enclosure;
• and
• a transformer coupled plasma (TCP) coil disposed entirely above the wafer treatment chamber, wherein a first portion of the TCP coil is disposed within the heating enclosure and a second portion of the TCP coil is disposed outside the heating enclosure.

A wafer treatment system, comprising:

• a wafer treatment chamber defining a treatment area within which a wafer is treated;
• a gas injection system, comprising:
• a gas injector coupled to the wafer treatment chamber and configured to inject a first gas into the treatment area;
• and
• a heating enclosure enclosing the gas injector for heating the first gas;
• and
• a transformer coupled plasma (TCP) coil disposed entirely above the wafer treatment chamber, wherein:
• a first portion of the TCP coil is disposed within the heating enclosure and a second portion of the TCP coil is disposed outside the heating enclosure, and
• the TCP coil is configured to facilitate generation of plasma using the first gas for treatment of the wafer in the treatment area.