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US 12,183,538 B2Granted
Semiconductor manufacturing apparatus, semiconductor device and manufacturing method of semiconductor device
AssigneeKioxia Corporation
InventorTakayuki Ito
Life of this patent
Estimating the term…
Abstract
A semiconductor manufacturing apparatus according to the present embodiment includes a stage on which a wafer can be placed. A separator separates a beam of impurities to be introduced into the wafer into an ion component and a neutral component. A controller switches the semiconductor manufacturing apparatus between a first mode and a second mode, where in the first mode, the ion component is introduced into the wafer and in the second mode, the neutral component is introduced into the wafer.
Claims8
A semiconductor manufacturing apparatus comprising:
- a stage on which a wafer can be placed;
- a separator configured to separate a beam of impurities to be introduced into the wafer into an ion component and a neutral component;
- a controller configured to switch the semiconductor manufacturing apparatus between a first mode and a second mode, where the ion component being introduced into the wafer in the first mode and the neutral component being introduced into the wafer in the second mode;
- and
- drivers configured to move the stage to a first location at which the ion component is introduced, and to a second location at which the neutral component is introduced.
2 more elements
A semiconductor manufacturing apparatus comprising:
- a stage on which a wafer can be placed;
- a separator configured to separate a beam of impurities to be introduced into the wafer into an ion component and a neutral component;
- and
- a controller configured to switch the semiconductor manufacturing apparatus between a first mode and a second mode, where the ion component being introduced into the wafer in the first mode and the neutral component being introduced into the wafer in the second mode, wherein
- the separator causes a difference in energy between the ion component and the neutral component, introduces the ion component into the wafer by using first energy, and introduces the neutral component into the wafer by using second energy.
2 more elements
Dependencies are inferred from the claim text.