Three-terminal multilayer ceramic capacitor

A three-terminal multilayer ceramic capacitor comprising:

• a multilayer body that includes a first principal plane and a second principal plane facing each other in a height direction, a first end surface and a second end surface facing each other in a length direction perpendicular or substantially perpendicular to the height direction, and a first side surface and a second side surface facing each other in a width direction perpendicular or substantially perpendicular to the height direction and the length direction, and includes a plurality of laminated dielectric layers;
• a plurality of first internal electrode layers located on the plurality of dielectric layers and extended to the first end surface and the second end surface;
• a plurality of second internal electrode layers located on the plurality of dielectric layers and extended to the first side surface and the second side surface;
• a first external electrode located on the first end surface and connected to the first internal electrode layer;
• a second external electrode located on the second end surface and connected to the first internal electrode layer;
• a third external electrode located on the first side surface, extending from the first side surface, located on a portion of the first principal plane and a portion of the second principal plane, and connected to the second internal electrode layer;
• and
• a fourth external electrode located on the second side surface, extending from the second side surface, located on a portion of the first principal plane and a portion of the second principal plane, and connected to the second internal electrode layer;
• wherein
• the first external electrode includes a first base electrode layer including a conductive metal and a glass component, a first organic layer including an organosilicon compound covering the first base electrode layer, and a first plating layer located on the first organic layer;
• the second external electrode includes a second base electrode layer including a conductive metal and a glass component, a second organic layer including an organosilicon compound covering the second base electrode layer, and a second plating layer located on the second organic layer;
• the third external electrode includes a third base electrode layer including a conductive metal and a glass component, a third organic layer including an organosilicon compound covering the third base electrode layer, and a third plating layer located on the third organic layer;
• the fourth external electrode includes a fourth base electrode layer including a conductive metal and a glass component, a fourth organic layer including an organosilicon compound covering the fourth base electrode layer, and a fourth plating layer located on the fourth organic layer;
• the first organic layer covers the first base electrode layer;
• the second organic layer covers the second base electrode layer;
• an atomic concentration ratio of Si to Cu is greater than or equal to about 1.5% and less than or equal to about 5.5% in a Cu concentration and a Si concentration on a surface of the first organic layer in a portion facing the first plating layer;
• the atomic concentration ratio of Si to Cu is greater than or equal to about 1.5% and less than or equal to about 5.5% in the Cu concentration and the Si concentration on a surface of the second organic layer in a portion facing the second plating layer;
• a surface roughness of the portion facing the first plating layer on the surface of the first organic layer is greater than or equal to about 0.334 and less than or equal to about 0.371;
• a surface roughness of the portion facing the second plating layer on the surface of the second organic layer is greater than or equal to about 0.334 and less than or equal to about 0.371;
• the third organic layer covers the third base electrode layer;
• the fourth organic layer covers the fourth base electrode layer;
• the atomic concentration ratio of Si to Cu is greater than or equal to about 0.8% and less than or equal to about 2.8% in the Cu concentration and the Si concentration on a surface of the third organic layer in a portion facing the third plating layer;
• the atomic concentration ratio of Si to Cu is greater than or equal to about 0.8% and less than or equal to about 2.8% in the Cu concentration and the Si concentration on a surface of the fourth organic layer in a portion facing the fourth plating layer;
• a surface roughness of the portion facing the third plating layer on the surface of the third organic layer is greater than or equal to about 0.352 and less than or equal to about 0.395;
• and
• a surface roughness of the portion facing the fourth plating layer on the surface of the fourth organic layer is greater than or equal to about 0.352 and less than or equal to about 0.395.