US 12,183,422 B2 · Memory device and in-memory search method thereof

Abstract

A memory device and an in-memory search method thereof are provided. The in-memory search method includes: providing, in a first stage, a first voltage or a second voltage to a word line of at least one target memory cell according to a logical status of searched data, and reading a first current; providing, in a second stage, a third voltage or a fourth voltage to the word line of the at least one target memory cell according to the logical status of the searched data, and reading a second current; and obtaining a search result according to a difference between the second current and the first current.

Claims17

Dependent claims

An in-memory search method, comprising:

providing, in a first stage, a first voltage or a second voltage to a word line of at least one target memory cell according to a logic status of searched data, and reading a first current;
providing, in a second stage, a third voltage or a fourth voltage to the word line of the at least one target memory cell according to the logic status of the searched data, and reading a second current;
and
obtaining a search result according to a difference between the first current and the second current, wherein the first voltage is less than the third voltage, the third voltage is less than or equal to the second voltage, and the second voltage is less than the fourth voltage.

1 more element

A memory device, comprising:

a memory cell array;
and
a controller, coupled with the memory cell array and used to:
provide, in a first stage, a first voltage or a second voltage to a word line of at least one target memory cell according to a logic status of searched data, and read a first current;
provide, in a second stage, a third voltage or a fourth voltage to the word line of the at least one target memory cell according to the logic status of the searched data, and read a second current;
obtain a search result according to a difference between the first current and the second current, wherein the first voltage is less than the third voltage, the third voltage is less than or equal to the second voltage, and the second voltage is less than the fourth voltage.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/166,495Filed 9 Feb 2023

Published

US 2024/0274164 A115 Aug 2024

Granted

31 Dec 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

G11C 7/1069
Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits: i/O lines read…
G11C 15/046
Using semiconductor elements: using non-volatile storage elements
G11C 8/08
Arrangements for selecting an address in a digital store: word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down…
G11C
Static stores

Memory device and in-memory search method thereof

Life of this patent

Memory device and in-memory search method thereof

Life of this patent

Abstract

Claims17