Setting switching for single-level cells

A memory device, comprising:

• one or more memory arrays;
• and
• processing circuitry coupled with the one or more memory arrays and configured to cause the memory device to:
• receive, from a memory system, an access command;
• determine whether the access command corresponds to a single-level cell of the one or more memory arrays;
• determine whether one or more bits of the access command indicate a setting of a plurality of settings, each setting of the plurality of settings for a single-level cell block or whether the one or more bits of the access command indicate at least a portion of a page address based at least in part on determining that the access command corresponds to the single-level cell;
• and
• perform an access operation corresponding to the access command using the setting based at least in part on determining that the one or more bits of the access command indicate the setting.

A non-transitory computer-readable medium storing code comprising instructions which, when executed by processing circuitry of an electronic device, cause the electronic device to:

• receive, from a host system, an access command for a memory device;
• determine whether the access command corresponds to a single-level cell of the memory device;
• modify the access command to comprise one or more bits indicating a setting for accessing one or more memory cells of a single-level cell block based at least in part on determining that the access command corresponds to the single-level cell;
• and
• issue, to the memory device, the access command comprising the one or more bits indicating the setting for the single-level cell block based at least in part on the modifying.

A non-transitory computer-readable medium storing code comprising instructions which, when executed by a processing circuitry of an electronic device, cause the electronic device to:

• receive, from a memory system, an access command;
• determine whether the access command corresponds to a single-level cell of a memory device;
• determine whether one or more bits of the access command indicate a setting of a plurality of settings, each setting of the plurality of settings for a single-level cell block or whether the one or more bits of the access command indicate at least a portion of a page address based at least in part on determining that the access command corresponds to the single-level cell;
• and
• perform an access operation corresponding to the access command using the setting based at least in part on determining that the one or more bits of the access command indicate the setting.

A method performed by a memory system, comprising:

• receiving, from a host system, an access command for a memory device;
• determining whether the access command corresponds to a single-level cell of the memory device;
• modifying the access command to comprise one or more bits indicating a setting for accessing one or more memory cells of a single-level cell block based at least in part on determining that the access command corresponds to the single-level cell;
• and
• issuing, to the memory device, the access command comprising the one or more bits indicating the setting for the single-level cell block based at least in part on the modifying.