Memory device, programming method and memory system

A memory system, comprising:

• a controller;
• and
• a memory device, the controller being coupled to the memory device and used to control the memory device, wherein the memory device comprises:
• a memory cell array comprising a plurality of word lines and a plurality of bit lines;
• each of the word lines comprising at least two word line segments, each of the word line segments in the word line having different signal transmission distances from a word line driver, different word line segments in the word line corresponding to different bit lines respectively;
• the word line driver configured to apply a word line voltage to the word line;
• and
• a bit line driver configured to apply different bias voltages to different bit lines corresponding to the different word line segments respectively during application of a programming pulse.